A Physical Mosfet Model Applicable To Extremely Scaled Cmos Ic Design
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A Physical Mosfet Model Applicable To Extremely Scaled Cmos Ic Design
Abstract:a Process-based Model (ufet) For Deep-submicron Bulk-silicon Mosfets Is Developed And Verified With Numerical Device Simulations And Measured Data. The Charge-based Model Is Physical With Accountings For The Predominant Short-channel (e.g., Charge Sharing, Drain-induced Threshold Reduction And Velocity Saturation) And Extremely Scaled-technology (i.e., Energy Quantization And Polysilicon-gate Depletion) Effects In Mosfets. The Key To Ufet Is The Characterization Of The Bias-dependent Two-dimensional Regions Near The Source Drain Junctions Which Can Extend Over A Significant Fraction Of The Metallurgical Channel Length.
- 品牌: Dissertation Discovery Company, LLC
- 类别: 计算机与互联网
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语言: English
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作者: Douglas Weiser
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出版日期: 2019-07-21
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页数: 210
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出版社／标签: Dissertation Discovery Company | LLC
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格式: Paperback
- Fruugo ID: 556917723-1125151397
- ISBN: 9780530007960
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