Effects Of Ultra-thin Germanium Layers At The Silicon-oxide Interface During Oxi
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Effects Of Ultra-thin Germanium Layers At The Silicon-oxide Interface During Oxi
Abstract:it Is Well Known That The Oxidation Of Silicon Will Inject Interstitial Atoms Into The Bulk, Causing Various Effects Such As Oed And Osf. The Presence Of Germanium At This Oxidizing Interface Has Long Been Known To Suppress This Interstitial Injection. Previously It Was Believed That Only The Top Monolayer At The Oxidizing Interface Was Responsible For This Effect Or Participated In The Reaction, But The Effects Of Monolayer And Sub-monolayer Germanium In This Region Have Never Been Studied.
- 品牌: Dissertation Discovery Company, LLC
- 类别: 计算机与互联网
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语言: English
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作者: Thomas Martin Jr
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出版日期: 2019-07-21
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页数: 158
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出版社／标签: Dissertation Discovery Company | LLC
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格式: Paperback
- Fruugo ID: 556918329-1125152044
- ISBN: 9780530004327
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